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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF277 VHF power MOS transistor
Product specification September 1992
Philips Semiconductors
Product specification
VHF power MOS transistor
FEATURES * High power gain * Easy power control * Gold metallization ensures excellent reliability * Good thermal stability * Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline and symbol. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the `General' section for further information. PINNING - SOT119 PIN 1 2 3 4 5 6 DESCRIPTION source source gate drain source source WARNING Product and environmental safety - toxic materials
andbook, halfpage
BLF277
PIN CONFIGURATION
1
2
d
3
4
g
MBB072
s
5
6
MSB006
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling.
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 50 PL (W) 150 Gp (dB) > 14 D (%) > 50
September 1992
2
Philips Semiconductors
Product specification
VHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS - - - - -65 - MIN.
BLF277
MAX. 110 20 16 220 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C; Ptot = 220 W Tmb = 25 C; Ptot = 220 W THERMAL RESISTANCE 0.8 K/W 0.2 K/W
102 handbook, halfpage ID (A) 10
MRA906
MGP219
handbook, halfpage
300
Ptot (W) 200
(1)
(1)
(2)
(2)
1
100
10-1
1
10
102
VDS (V)
103
0 0 50 100 Th (C) 150
(1) Current in this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
VHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) VGS gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 50 mA VGS = 0; VDS = 50 V VGS = 20 V; VDS = 0 ID = 50 mA; VDS = 10 V ID = 50 mA; VDS = 10 V ID = 5 A; VDS = 10 V ID = 5 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz MIN. 110 - - 2 - 4.5 - - - - - TYP. - - - - - 6.2 0.2 25 480 190 14
BLF277
MAX. - 2.5 1 4.5 100 - 0.3 - - - - V
UNIT mA A V mV S A pF pF pF
MGP220
handbook, halfpage
0
MGP221
T.C. (mV/K) -1
handbook, halfpage
30
ID (A) 20
-2
-3 10 -4
-5 10-2 VDS = 10 V.
10-1
0 1 ID (A) 10 0 VDS = 10 V; Tj = 25 C. 5 10 VGS (V) 15
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
handbook, halfpage
0.4
MGP222
handbook, halfpage
1200
MGE615
RDS(on) () 0.3 800 C (pF)
0.2
Cis 400
0.1
Cos
0 0 50 100 Tj (C) 150
0 0 20 40 VDS (V) 60
ID = 5 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
MGP223
handbook, halfpage
150
Crs (pF)
100
50
0 0 20 40 VDS (V) 60
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
VHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.2 K/W; RGS = 16 ; unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 50 IDQ (A) 0.1 PL (W) 150 Gp (dB)
BLF277
D (%) > 50 typ. 58
> 14 typ. 17
Ruggedness in class-B operation The BLF277 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 50 V; f = 175 MHz at rated load power.
MGP224
MGP225
handbook, halfpage
25
Gp (dB)
100 D (%) Gp 80
handbook, halfpage
200
PL (W) 150
20
15
D
60 100
10
40 50
5
20
0 0 50 100 150
0 200 250 PL (W)
0 0 2 4 6 PIN (W) 8
Class-B operation; VDS = 50 V; IDQ = 0.1 A; ZL = 1.4 + j1.6 ; f = 175 MHz.
Class-B operation; VDS = 50 V; IDQ = 0.1 A; ZL = 1.4 + j1.6 ; f = 175 MHz.
Fig.9
Power gain and efficiency as functions of load power, typical values.
Fig.10 Load power as a function of input power, typical values.
September 1992
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
handbook, full pagewidth
C14 input 50 L1 C3 C1 L2 C2 L3 L4 L5 C4 L6 C8 L7 L8 L9 R1 C5 D.U.T. L10 L12 L11 C9 C10 C15 L13 L14 L15 C18 L18
C18 C19 L17 L18 C17 L19
output 50
MLA222
R4 C7 C8 C12 R2 R3 C13 L20
C11
+ VDD
f = 175 MHz.
Fig.11 Test circuit for class-B operation.
September 1992
7
Philips Semiconductors
Product specification
VHF power MOS transistor
List of components (class-B test circuit) COMPONENT C1, C8, C19 C2, C4, C17 C3 C5, C6, C9 C7, C10, C13 C11 C12 C14, C15 C16 C18 L1 L2 L3 L4 DESCRIPTION multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor (note 2) film dielectric trimmer multilayer ceramic chip capacitor (note 1) stripline (note 3) stripline (note 3) stripline (note 3) 2 turns enamelled 1.5 mm copper wire stripline (note 3) stripline (note 3) 2 turns enamelled 1.5 mm copper wire stripline (note 3) stripline (note 3) stripline (note 3) 3 turns enamelled 1.5 mm copper wire 1 turn enamelled 1.5 mm copper wire stripline (note 3) VALUE 680 pF 5 to 60 pF 33 pF 100 pF 100 nF 10 nF 10 F, 63 V 3 x 22 pF in parallel 4 to 40 pF 18 pF 49 49 49 25 nH length 8 mm width 4 mm length 12 mm width 4 mm length 7.5 mm width 4 mm length 3.7 mm int. dia. 5 mm leads 2 x 1 mm length 15.5 mm width 4 mm length 5 mm width 4 mm length 4.2 mm int. dia. 5 mm leads 2 x 4 mm length 18 mm width 6 mm length 6 mm width 6 mm length 7 mm width 6 mm length 6.8 mm int. dia. 5 mm leads 2 x 3 mm int. dia. 2.8 mm leads 2 x 1 mm length 15.5 mm width 5 mm DIMENSIONS
BLF277
CATALOGUE NO.
2222 809 08003
2222 852 47104 2222 852 47103
2222 809 08002
L5 L6 L7
49 49 25 nH
L8 L9 L10, L12 L11
31 31 31 40 nH
L13 L14
3 nH 36
September 1992
8
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
COMPONENT L15 L16
DESCRIPTION stripline (note 3) 2 turns enamelled 2.5 mm copper wire stripline (note 3) stripline (note 3) grade 3B Ferroxcube RF choke 0.4 W metal film resistor 10 turn potentiometer 0.4 W metal film resistor 0.4 W metal film resistor
VALUE 36 28 nH
DIMENSIONS length 8 mm width 5 mm length 5.5 mm int. dia. 5 mm leads 2 x 3 mm length 12 mm width 5 mm length 8.5 mm width 5 mm
CATALOGUE NO.
L17 L18, L19 L20 R1 R2 R3 R4 Notes
36 36
4312 020 36642 16 50 k 400 k 100 k
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality. 3. The striplines are mounted double copper-clad printed circuit board, with epoxy glass dielectric (r = 4.5); thickness 1.6 mm.
September 1992
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
handbook, full pagewidth
R2 L20
R3
C12 R4 L6 C5 C8 C7 R1 L9 L13 L10 L12 L11 C9 C11 C13 C10 L14 C14 L16 C15 C16 L15 C18 C19 L17 L18 L19 C17
C1 L1 L2 L3 C2
L4 L5
C3
L7
L8 C4 C6
MBA394
handbook, full pagewidth
191 mm
strap
rivets
strap rivets 70 mm
strap
mounting screws (6x)
strap
MBA393
The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets.
Fig.12 Component layout for 175 MHz class-B test circuit.
September 1992
10
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
MGP226
MGP227
handbook, halfpage
10
handbook, halfpage
10
ZL ()
Zi () ri 0 xi
8 RL
6
4 XL 2
-10
0 0 50 100 150 250 200 f (MHz) 0 50 100 150 200 250 f (MHz)
Class-B operation; VDS = 50 V; IDQ = 0.1 A; RGS = 16 ; PL = 150 W.
Class-B operation; VDS = 50 V; IDQ = 0.1 A; RGS = 16 ; PL = 150 W.
Fig.13 Input impedance as a function of frequency (series components), typical values.
Fig.14 Load impedance as a function of frequency (series components), typical values.
handbook, halfpage
40
MGP228
Gp (dB) 30
20
handbook, halfpage
10 Zi ZL
MBA379
0 0 50 100 150 200 250 f (MHz)
Class-B operation; VDS = 50 V; IDQ = 0.1 A; RGS = 16 ; PL = 150 W.
Fig.15 Definition of MOS impedance.
Fig.16 Power gain as a function of frequency, typical values.
September 1992
11
Philips Semiconductors
Product specification
VHF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLF277
SOT119A
A F q
C
U1 H1 b2
B w2 M C c
2
4
6
H
U2
p
D1 w1 M A B
U3
D
A
1
b1
3
b e
5
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.39 6.32 b 5.59 5.33 b1 5.34 5.08 b2 4.07 3.81 c D D1 e F H H1 p Q q U1 U2 U3 w1 w2 1.02 0.04 w3 0.26 0.01
0.18 12.86 12.83 6.48 0.07 12.59 12.57
2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97
4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06
0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475
OUTLINE VERSION SOT119A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1992
12
Philips Semiconductors
Product specification
VHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF277
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992
13

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